Design of W-Band SiGe BiCMOS Low Noise Amplifier

A W-band low noise amplifier is designed based on the 0.13 μm SiGe BiCMOS process. The two-stage fully differential structure consisting of Cascode is used. In order to achieve good input and output matching performance, transformer matching is adopted between the two stages. Electromagnetic simulation is performed using 3D electromagnetic field simulation software. The simulation results show that the input and output matched well in the 90-100 GHz band. At 94 GHz point, the small signal gain is 15.6 dB meanwhile the input 1 dB compression point power is -14 dBm. The noise figure is 6 dB. The chip size is only 0.48mm × 0.19 mm. This low noise amplifier has good microwave characteristic which is suitable for communication, radar, imaging and other fields.