High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures

Dark current-voltage characteristics, sensitivity and microwave characteristics of photodiodes based on InAlAs/InGaAs (0.6-1.5 μm)/InP(001) heteroepitaxial layers with Schottky barrier and mesa structure were studied. It is shown that the dark current at reverse bias of 2 V for photodiodes with diameters from 10 to 40 μm does not exceed 1×10
^-10
A. The sensitivity of photodiodes of different diameters with an InGaAs absorbing layer of 640 nm thick is not less than 0.55 A/W. For Schottky photodiodes with a diameter of 15 μm, cutoff frequency is 28 GHz and maximal output microwave power is 58 mW at the frequency of 20 GHz.