Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-µA Current Level in SiOx-Based Flexible Cross-Point RRAM

The impact of Ti interfacial layer on resistive switching characteristics in 5×5 μm 2 Ni/Ti/SiO x /Ni flexible cross-point resistive random access memory (RRAM) structure for the first time. Devices with Ti buffer layer exhibits bipolar resistive switching (BRS) with large memory window (HRS/LRS) of > 10 3 at 500 nA current compliance (CC). Thin 4-nm Ti interfacial layer regulates the migration of oxygen ions (O -2 ) and controls BRS process. Highly non-linear (non-linearity of > 22) switching (rectifying ratio i.e, RR of >4×10 3 ) is obtained from reference sample without (W/O) Ti buffer layer.