Characterization of Chalcogenide Selectors for Crossbar Switch Used in Nonvolatile FPGA

Sputter deposited Ge
x
Se
1−x
films are characterized, prior to device fabrication for a selector. A Se-rich film has GeSe
4/2
tetrahedral structure and higher crystallization temperature than Ge-rich films. Printed Ag-paste electrodes are used for I-V measurement and an amorphous Se-rich Ge
x
Se
1−x
film shows the good switching property for the selector with an on/off ratio of 4.8 × 10
⁴
.