Atomistic Study of Transport Characteristics in Sub-1nm Ultra-narrow Molybdenum Disulfide (MoS2) Nanoribbon Field Effect Transistors

In this work, nanoribbon field-effect-transistors (FETs) with an ultra-narrow monolayer MoS
₂
channel are investigated to understand the transverse scaling limitations of MoS
₂
FETs. It is observed that the bandgap of monolayer nanoribbon MoS
₂
can be largely affected by the passivation atoms, wherein OH passivation is more effective than H passivation. Then, impacts of passivation atoms on transport characteristics in MoS
₂
FETs with ultra-narrow MoS
₂
channel are calculated. Though higher I
_on
and lower I
_off
can be obtained even in narrow MoS
₂
FETs with O/H passivation, I
_off
is hard to be suppressed due to the contribution of edge states. Our results indicate that edge states engineering could be one key point to integrate MoS
₂
devices into CMOS technology.