High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG

This paper demonstrates high performance strained p-type double stacked Ge Gate-AlI-Around (GAA) devices at significantly reduced gate lengths (L
_G
~ 25nm) compared to our previous work. Excellent electrostatic control is maintained down to L
_G
=25 nm by using extension-less scheme, while the performance is kept by appropriate spacer scaling and implementation of highly B-doped Ge or GeSn as source/drain (S/D) material.