GaN power transistor switching performance in hard-switching and soft-switching modes

The paper deals with the investigation of the switching performance of the GaN power transistors, while the focus is given on the comparisons of the performance within hard switching (HS) and soft switching, i.e. zero voltage switching commutation mode. For this purpose, specific testing device was utilized and adapted to switching requirements of selected transistor structure. Switching performance was identified in the way of power loss identification during the HS and ZVS commutation mode, whereby parametric evaluation in dependency on switching frequency and power load was done. The results show what is the amount of the power loss reduction when perspective transistor structure is used in combination with ZVS switching, even when very high frequency operation is considered.