I. Introduction
The release of unlicensed 60 GHz band and development of 5G technologies (millimeter-wave communications), that is aimed at increasing data rate on a wireless communication network by a factor of 100, imposing stringent specifications like: large impedance bandwidth, high gain, low profile and temperature independent capability on the design of the radio frequency electronics [1]. Millimeter-wave, demonstrated by Sir J.C. Bose in the year of 1985. This wave was also termed as the extremely high frequency (EHF) and frequency band of spectrum lies in between 30–300 GHz, having short wave length range from 10mm-1mm. In order to accumulate them, various front-end antenna solutions are available, in the likes of monopoles, dipoles and patch antennas. These antennas are characterized by low profile & they are easily integrated on chip. However, unless advanced design solutions based on integration of dielectric superstrates and lensing structures are used, antennas typically suffer from reduced radiation efficiency and narrow impedance bandwidth. On the other hand, these DRAs [2] are one of the promising candidates, to replace traditional radiating elements like microstrip patch at high frequencies, especially for applications at the millimeter waves [4]. This is mainly attributed to the fact that DRAs do not suffer from conduction losses & can be characterized easily.