Impact of Source Engineering in Split Drain Tunnel Field Effect Transistor

This paper confers the results of the analysis of source and drain doping engineering for a 2D TFET model. Two different models have been extensively studied that are composed of split source and split drain region with varying doping concentration. Both the models consist of split drain, one with split source and another with double split source and are specified as Split Source Split Drain TFET (SS-SD TFET)and Double Split Source Split Drain TFET (DSS-SD TFET). The device characteristics are compared with Split Drain (SD TFET)model and the improvements are registered that exhibits reduction in ambipolar conduction (OFF current)along with the increase of tunneling effect. Simulations are performed using Silvaco, Atlas.