A New Method for Extraction and Analysis of Au Contamination on Semiconductor Wafer Surface

This paper is about a study of HF free extraction method for the analysis of Au contaminate on semiconductor wafer surface. The Au contaminate was extracted into a mixed acids extraction solution of HNO
₃
and HCl by “Dynamic Thin Layer” (DTL) extraction method. Extraction solution was then analyzed with ICP-MS instrument. This study demonstrated an alternative method other than VPD-DC-ICP-MS and TXRF methods for the analysis of Au contaminate on the wafer surface.