RFFE Integration Design for 5G in 0.13um RFSOI Technology

RFFE module design for 5G is integrated with cost effective in 0.13um RFSOI CMOS technology. Design of high power antenna switch SP12T achieves IL<;1dB and worst case isolation>21dB at Sub-6GHz with maximum power handling capacity, Pmax>36dBm and harmonic distortion power <;-45dBm in 1mm
²
chip area. PAC design with the tuning ratio >20 and Q>45 at 1GHz is realized for impedance and aperture tuning. A 6-Bit attenuator with digital attenuation step of 0.5dB and low insertion loss of <;2.5dB at sub-6GHz is design for 5G RFFE. 2.5GHz low power cascade LNA design with gain of 18.7dB and NF of 0.85dB.