Surge Current Capability of GaN E-HEMTs in Reverse Conduction Mode

In this paper, we investigate the surge current capability of two types of commercial GaN enhancement-mode HEMTs (E-HEMTs) in the reverse conduction mode, and reveal the impacts of the p-GaN technology and gate-to-source voltage (VGS). The surge current capability of GaN E-HEMT can be enhanced with ohmic p-GaN contact and positive VGS, owing to higher efficiency of hole injection and channel modulation. To our best knowledge, it is the first report to study the surge current capability and to reveal its underlying mechanisms in lateral GaN power devices.