High Performance SEB Hardened Trench Power MOSFET with Partially Widened Split Gate and Trench Source

In this paper, an optimized trench power MOSFET is presented with three-dimensional (3D) TCAD simulation. A superior device's performance can be achieved by using the partially widened split gate and the trench source. Simulation results indicate that the new structure can present a good static parameters and a better RDS(ON)×QGD FOM compared with the conventional structure. Moreover, the proposed structure shows no SEB under the device's rated breakdown voltage and the LET value of 1pC/μm (100MeV·cm
²
·mg
^-1
, approximately the maximum LET energy of gold or bismuth ion). That means, the proposed structure will not exhibit SEB under heavy ions. Therefore, the new structure demonstrates a good electrical parameter and a superior SEB SOA simultaneously.