High-Uniformity 4×4 SiC Avalanche Photodiode Array for Ultraviolet Detection

4×4 H-SiC avalanche photodiode (APD) arrays with a high uniformity have been fabricated and characterized for ultraviolet (UV) detection in this work. A high optical gain of over 10
⁵
and a maximum unity-gain quantum efficiency of 68.2% at the wavelength of 282 nm are obtained for the 4HSiC APD pixels in the array. In addition, the APD arrays show high-uniformity breakdown voltage with a variation smaller than 1 V, and the dark currents of all the 16 pixels are below 1 nA at 95% breakdown voltage.