Tunneling Leakage Current of Gate-All-Around Nanowire Junctionless Transistor with an Auxiliary Gate

Gate-all-around nanowire junctionless transistor with an auxiliary gate (AG-GAAJLT) is proposed to restrain the band-to-band tunneling (BTBT) resulted in off-state leakage current in junctionless transistor. The device is investigated through three-dimensional (3D) numerical simulations. Results show that the AG-GAAJLT has seven orders of magnitude lower off-state current compared with the conventional gate-all-around junctionless transistor (CGAAJLT). The effects of auxiliary gate voltage (V
_AG
) and distance between control gate and auxiliary gate (d
_G-AG
) are studied, and the optimizations of V
_AG
and d
_G-AG
are presented. This work provides a new method to solve the BTBT in GAAJLT.