Thermal Analysis of GaN Schottky Diodes in the Terahertz Frequency Multipliers

GaN Schottky diodes exhibit great potential for high power THz frequency multipliers. This paper presents thermal characterization results of GaN Schottky diodes in the frequency multipliers with flip-chip configuration. Common models of the different Schottky diode multiplier chip layouts are analyzed with 3-D thermal simulators. The thermal resistance results show that the GaN Schottky diodes chips have evident advantage in thermal management compared with GaAs chips. The differences of n -anode Schottky diodes chips in thermal effect are investigated in detail. The impacts of solders and filter substrate on thermal resistance are shown, which indicate the the filter substrate with high thermal conductivity will improve the performance of the THz frequency multipliers obviously.