A very narrow mesa biased IGBT for ultra-low on-state saturation voltage and a good short circuit ruggedness

In this paper, a novel CSTBT with very narrow mesa structure is proposed by numerical simulation. The floating pwell region in the proposed structure is connected with the cathode through the very narrow mesa structure to deplete the very high dose concentration of the CS layer. Therefore, the conductivity modulation effect of the proposed structure can be enhanced significantly. It can help the proposed structure to achieve ultra-low on-state saturation voltage closed to the theoretical limit. In addition, there is no degeneration of the short-circuit behavior due to the relatively normal active cell mesa region. It can avoid the CIBL behavior induced by the very narrow conductive channel structure.