Study on inhibition of the M-Type Cathode edge emission in the high frequency vacuum electronic devices

The ion beam film deposition technique has been introduced to inhibit the emission of the M-Type cathode edge in our research, by which the surface of the cathode is coated with a metal membrane, such as hafnium(Hf), zirconium(Zr) and tantalum (Ta). Below 900°C, the effect of the inhibit membrane is all well, which the emission current density decreased to 0.3A/cm
²
. With the best inhibitory of hafnium, it has been evidenced by XPS and XRD analysis that the inhibition mechanism of Hf film cathode, which was investigated by the interaction between barium and hafnium.