First Demonstration of $\text{In}_{1-\mathrm{x}}\text{Ga}_{\mathrm{x}}\text{As}$ Macaroni Channel for Future 3-D NAND

We demonstrate for the first time epitaxially grown InGaAs macaroni channel down to 15 nm thickness for 3-D NAND with a low temperature (<; 575 °C) process. The epitaxial InGaAs macaroni channel is selectively grown inside memory hole, with different compositions of In and Ga, by replacing an a-Si sacrificial channel. InGaAs macaroni channel has improved gate control over the InGaAs full channel. As a result, lower I
_OFF
w.r.t. full channel is demonstrated, while retaining a similar ION of full channel InGaAs and same memory performance.