A Physics-based Lumped-charge Model for SiC MPS Diode Implemented in PSPICE

This paper presents a physics-based lumped-charge model for SiC MPS (Merged PiN Schottky) diode. According to the device configuration, the proposed model has been divided into two parts: the bipolar sub-circuit and the unipolar sub-circuit, and each region is modeled by the lumped-charge approach. Then, the model has been implemented into the PSPICE simulator in the form of an equivalent circuit. Besides, for the characterization of surge condition with significant temperature change, the proposed model is also temperature dependent. An accurate lumped thermal model of the module is established by the extraction of structural parameters with a scanning electron microscope. Finally, the model is verified by experiments with Cree CAS300M12BM2 power module, and the electro-thermal co-simulation is carried out.