Electrochemical Oxidation in AlGaN/GaN-on-Si High Electron Mobility Transistors

Pit formation via electrochemical oxidation has been identified as one of the critical degradation mechanisms in AlGaN/GaN high electron mobility transistors. It is known to be strongly influenced by the electric field, temperature and stressing environment. In this paper, we will extend this understanding to include the role of threading dislocations, current density and the density of the passivation layer.