Experimental Study on the Transient Response of Negative Capacitance Tunnel FET

In this work, the transient response of a novel Negative Capacitance Tunnel FET (NC-TFET) design is experimentally studied under different sweeping rates of gate input voltage. Within a range of sweeping rate, the transient device characteristics exhibit improved subthreshold swing compared with DC results, which experimentally clarifies that the voltage amplification caused by NC effect is derived from the ferroelectric polarization switching rather than the stabilized switching process. Moreover, the measured transient results further indicate that the hysteresis of NC-based devices is also generated from the FE inherent dynamic behavior, and can be reduced under relatively low sweeping rate. This work provides new understanding and corresponding experimental evidence for NC effect.