Random Telegraph Noise after Hot Carrier Injection in Tri-gate Nanowire Transistor

Random telegraph noise (RTN) after hot carrier injection (HCI) is studied with respect to RTN measurement conditions and HCI stress conditions. Both the number and amplitude of observed RTN increase after HCI. RTN after HCI shows that RTN amplitude is roughly proportional to the threshold voltage shift by HCI. As injected carrier by HCI increases, the degradation in gate oxide occurs introducing the trap sites which generate larger RTN regardless of the trap position and inversion carrier distribution. Meanwhile, RTN amplitude shows a weak correlation with drain current degradation by HCI. Large drain current degradation with high stress drain voltage is caused not only by threshold voltage shift but also by the mobility degradation which has a small impact on RTN amplitude.