An Electro-thermo-mechanical Model Basing on Experimental Results for Press-pack IGBT Including MOS Side Two-Dimensional Effects

Because of the tremendous clamping force to keep all components of press pack IGBTs (PP-IGBTs) electrically and mechanically contact well, the piezoresistive effect is not negligible, and an Electro-thermo-mechanical IGBT model suitable for circuit simulation is needed in PP-IGBTs design and application. This paper has studied the influence of the mechanical clamping force on the IGBT switching characteristics, based on a large number of experiments. An improved Hefner IGBT model is proposed considering the MOS side 2-D effect and anisotropic carrier mobility. The accuracy of the proposed model is validated by comparing the computed results with experimental ones.