Simulation and Experiment in Neutron Induced Single Event Effects in SRAM

Neutron-induced single event effect is one of the significant factors affecting the reliability of memories. We applied Geant4 to establish a simulation model for neutron-induced single event upset (SED) in SRAM cell. The simulation results can quantitatively describe the SEU cross section evolution with the technology nodes and neutron energy. The results of neutron radiation experiments on SRAMs with different technology nodes are consistent with the simulation results. Moreover, we investigated the relationship of linear energy transfer (LET) and range of neutron-induced secondary particles with their energy and atomic number.