Radiation Hard Increasing Methods for SOI HV CMOS

Theoretical and experimental research of total ionizing dose (TID) effects on low voltage (LV) and high voltage (HV) MOS transistors are presented. The dependence of the various types transistor's radiation resistance of the electric operation mode during irradiation is investigated. Based on the obtained experimental data, the operation modes of the transistors, providing a high level of radiation resistance, are selected. Circuit solutions are presented to increase the radiation resistance of individual IP blocks. The results obtained allow us to expect several times increasing the radiation resistance of such units as digital to analog converters (DAC), analog to digital converters (ADC) and drivers of power switches.