Gas Phase Pore Stuffing for the protection of organo-silicate glass dielectric materials

Plasma induced damage on porous low-k dielectrics is a critical issue for lowering the interconnect RC delay in densely packed CMOS transistors. In this paper, we propose a new approach to protect the pores on porous organo-silicate glasses (OSG) during plasma process, so-called Gas Phase Pore Stuffing (GPPS).