Investigation of ferroelectric HfZrO FET for steep slope applications

N-channel FETs with ferroelectric (FE) HfZrO gate oxide are fabricated, showing steep subthreshold slope. The hysteresis vs. subthreshold slope tradeoff, performance dependence on the bias voltage and the competition between trapping and FE behavior are reported and discussed. A transient Id-Vg measurement technique assisting in differentiating between trapping and FE behavior is introduced.