Raman analysis of intrinsic and laser annealed n-type silicon film grown on glass using hot wire chemical vapor deposition

We have investigated the crystallinity of silicon film grown on glass substrate using hot wire chemical vapour deposition technique. In this study, we have grown intrinsic and phosphorous doped silicon thin film. The phosphorous doped n-type silicon films were prepared by doping intrinsic polycrystalline silicon film in two approaches. One approach used i) spin-on phosphorous dopant and the other approach used ii) phosphorous ion implantation. These films were annealed using 1064 nm infrared laser. Evaluation of crystallinity was performed by Raman spectroscopy with 514.5 nm excitation and Raman Imaging tool with 532 nm excitation. A large degree of non-homogeneity observed in the crystallinity of laser irradiated silicon film. This may be due to non-uniform melting and solidification of silicon film during laser annealing.