Back-Illuminated $2.74 \ \mu \mathrm{m}$-Pixel-Pitch Global Shutter CMOS Image Sensor with Charge-Domain Memory Achieving 10k e-Saturation Signal

A
$3208\times 2184$
global shutter image sensor with back-illuminated architecture is implemented in a 90 nm/65 nm imaging process. The sensor, having
$2.74\ \mu \mathrm{m}$
-pitch-pixels, achieves 10000 electrons full-well capacity and −80 dB parasitic light sensitivity. Furthermore, 13.8 e-/s dark current at 60°C and 1.85 erms random noise are obtained. In this paper, the structure of a pixel with memory along with saturation enhancement technology is described.