A 24.3Me− Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging

This paper presents a
$16\mu\mathrm{m}$
pixel pitch CMOS image sensor exhibiting 24.3Me-full well capacity with a record spatial efficiency of
$95\text{ke}^{-}/\mu \mathrm{m}^{2}$
and high quantum efficiency in near infrared waveband by the introduction of lateral overflow integration trench capacitor on
$\mathrm{a}\sim 10^{12}\text{cm}^{-3}$
p-type Si substrate. A diffusion of 5mg/dl concentration glucose was clearly visualized by an over 71 dB SNR absorption imaging at 1050nm.