Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory

New selector materials with very-low I
OFF
and optimum V
th
. based on As-Se-Ge chalcogenides are studied. An optimized composition is proposed, which achieves a good trade-off between thermal stability and cycling endurance and it is successfully integrated with PCM in a 3D stackable pillar structure. SET/RESET operation are demonstrated with ∼2V memory window. Selector is able to deliver 1mA ON current (7.9 MA/cm
²
) and fast speed (10 ns). More than 1E12 read cycling endurance is achieved in 1S1R
$(\text{OTS}+\text{PCM})$
device due to the excellent endurance of the selector.