A 2.5D Wafer-Level CMOS-IPD Rectenna Using Wide-Range Efficiency and Self-Biasing Topology for a RF Wireless Power Harvesting System

This work achieves a two-and-a-half-dimensional (2.5D) wafer-level radio frequency (RF) energy harvesting rectenna module with a compact size and high power conversion efficiency (PCE) that integrates a 2.45 GHz antenna in an integrated passive device (IPD) and a rectifier in a tsmc™
$\pmb{0.18},\mu \mathbf{m}$
CMOS process. The proposed rectifier provides a cross-coupled voltage doubling full-wave topology which can reach relatively high PCE by means of a relatively simple circuitry. The rectenna (including an antenna and rectifier) achieves an output voltage of 1.2 V and PCE of 36 % when the operation frequency is 2.45 GHz, with -10 dBm input power. The maximum efficiency of 81 % and maintain 75 % with 11 dB extension input power. The die size of the RF harvesting module is less than 1 cm
²
, The performance of this module makes it possible to energy mobile device and it is also very suitable for implantable medical devices (IMDs).