RF CMOS Transistor Equivalent Circuit Model up to 66 GHz

A CMOS small signal model suitable for millimeter wave applications and its parameter extraction has been proposed. In the model, multi bias nonlinear behavior of S11 and S22 are characterized. In addition, the effects of intrinsic and extrinsic parameters are scrutinized. To verify the validity, a 32-finger MOSFET in 90-nm CMOS process is fabricated and examined under multi bias conditions. An excellent agreement between measured and calculated have been accomplished which shows that the performance of transistor up to 66 GHz can accurately be characterized. An error between measured and model is calculated under zero bias, saturation bias and triode bias are within 0.0109 for S11, 0.0169 for S12, 0.0304 for S21 and 0.0130 for S
₂₂
, respectively. Furthermore, an error for 30-bias points are calculated to validate its accuracy.