High Responsivity Power Detectors for W/D-Bands Passive Imaging Systems in 0.13μm SiGe BiCMOS Technology

This paper presents the design, implementation and measurement results of power detectors (PDs) operating at W-band and D-band. Two detectors are designed and fabricated in 0.13μm SiGe BiCMOS technology. The measured minimum NEPs are 0.43 and 4.2 pW/Hz
^1/2
, and the peak responsivities are 772 and 132 kV/W for the W-band and D-band power detectors, respectively. Both the PDs have wideband input matching to improve the performance over the entire bandwidth and occupy less than 0.37 mm
²
of area. The fabricated chips demonstrate the state-of-the-art responsivity performance to be utilized in W/Dbands radiometer systems.