A 2 W 45 % PAE X-Band GaN HEMT Class-F MMIC Power Amplifier

Applying a 0.25 μm GaN HEMT MMIC technology and a class-F harmonic tune technique, a design of a small-sized high-efficiency 2 W X-band MMIC power amplifier is presented. The fabricated MMIC power amplifier exhibits the output power of 32.7-33.3 dBm and the PAE of 41-45 % at Vds = 30 V under pulse operation of duty of 10% in the frequency range of 8.8-9.8 GHz, which are in good agreement with simulated results.