A Study of Field Effect on In-Plane Graphene Structure for RF Application

In this novel work, we present the experimental result of electric field distribution of in-plane graphene structure by investigating the IV-CV measurements at room temperature. In this work, we also studied the Raman spectroscopy at 532 nm and correlative analysis of energy selective backscattered electrons mapping taken by ESB detector and the secondary electrons image acquired by the In-Lens detector at different energy level to confirm the graphene layer present on specific location and the layer thickness. The experimental results shows that the capacitance coupling between two electrode is 450 fFmm
^-1
at 0.18 V potential difference. Contact resistance and resistivity have been measured are ~220 Ω-μm and a resistivity ~1.8×10
^-4
Ω-cm
^-2
. Extrapolated parasitic resistance and capacitance measured from transfer length method are ~200Ω-μm and 445 fFmm
^-1
. These results are promising for high linearity graphene devices in radiofrequency application.