Parametric Optimization of Self-Switching Diode

Parametric optimization of a novel nano diode called self-switching device has been demonstrated using Silvaco TCAD simulator. The device exhibits non-linear characteristics analogous to a conventional diode without requiring any p-n junction. The cut-in voltage can be tuned by varying channel width of the device. The increase in channel doping concentration exhibits velocity saturation, hence, leading to the saturation of output current at higher voltages. The low subthreshold swing of about 100 mV/decade suggests potential utilization of SSDs in high on-off ratio, low power and low voltage electronic applications.