Optical invstigations of thermally evaporated Ge10Se60Te30 and Ge8Se60Te30In2 chalcogenide thin film for optical memory devices

A comparative study of optical constants (% T, α, k and Eg) for thermally evaporated Ge
₁₀
Se
₆₀
Te
₃₀
and Ge
₈
Se
₆₀
Te
₃₀
In
₂
thin films have been done in the present study. xray diffraction study revealed structural information of prepared films. SEM and EDS measurements are used for surface morphology and elemental analysis respectively. The optical band gap (Eg) of quaternary compound is found to be more as compared to ternary thin film and this increment is explained using electronegativity of glassy alloys.