A High-Temperature Model of MOSFET Characteristics in $0.13-\mu \text{m}$ Bulk CMOS

There is an increasing demand for reliable high-temperature electronics implemented in low-cost bulk CMOS technologies. In this paper, first, a detailed study of high-temperature impairments and reliability issues is presented. An analytical model for high-temperature operation of MOSFET devices in 0.13-μm bulk CMOS process is then presented. The proposed large-signal model includes temperature effect on the leakage current, carrier mobility and threshold voltage. The small-signal model includes temperature effect on the transconductance and output impedance. A prototype has been made in 0.13-μm bulk CMOS. The I-V transfer characteristics have been measured at different temperatures from 25°C to 200°C. The experimental results are compared with the simulation results from the developed model. The simulation results demonstrate a very good agreement with the experimental data. The EDA tools models provided by the foundry do not generally guarantee model correctness at high temperatures. Therefore, the foundry models of the 0.13-μm CMOS process have been simulated to verify the model reliability at high temperatures. The EDA tools results are overall in close agreement with the measured data, which shows the reliability of the transistor model for the 0.13-μm technology at high-temperature.