3D CFD Simulation of High-Temperature MOCVD Reactor for Epitaxial AlN Growth

Multi-wafer MOCVD equipment for epitaxial AlN growth is indispensable for the development of AlGaN-based UV LED. In this study, 3-Dimensional computational fluid dynamics modeling coupling surface reaction kinetics was carried out, and the number and distribution of the nozzle was optimized for home-made six-wafer reactor chamber. The average growth rate and inhomogeneity in thickness was about 1μmph and less than 7%, respectively.