1.34 μm InGaAsP/InP MQW Superluminescent Diodes with J-shaped Ridge Waveguide

We have fabricated InGaAsP/InP multiple quantum wells (MQWs) superluminescent diodes (SLDs) utilizing J-shaped ridge waveguide structure. In particular, the effects of the lengths and tilted angles of ridge waveguides on the output power and the spectrum of corresponding SLDs have been comprehensively studied. For SLDs without anti-reflection coatings on the facets, when the cavity length of 2 mm and tilted angle of 10
^o
are adopted, the spectral full width at half maximum (FWHM) value of 27.1 nm (centered at 1.34 μm) and the output power of 37.6 mW are simultaneously obtained under room temperature CW operation.