A Novel Characterization Technique to Extract High Voltage - High Current IV Characteristics of Power MOSFETs from Dynamic Measurements

This paper presents a methodology to characterize the IV characteristics of power MOSFETs at high voltage and high current (HVHC) operation region. This technique enables the characterization of power MOSFETs beyond the limits of curve tracers and permits a better understanding of the behavior of power MOSFETs at high power operation conditions, similar to those experienced in the application. The extended IV characteristics of a state-of-the-art SiC power MOSFET, extracted with the proposed method at different temperatures, reveal important short-channel effects such as channel length modulation and drain induce barrier lowering (DIBL). These measurements can be beneficial to accurately predict the dynamic behavior of SiC power MOSFETs and to improve the accuracy of transistor models.