EMI Analysis of a High Power Silicon Carbide Two-level Inverter

Successive generations of aircraft demand more electrical energy as pneumatic and hydraulic systems are replaced with electrical components. The more electric aircraft (MEA) transformation aims to improve fuel economy, increase reliability, and lower operating costs. To fully enjoy the benefits of an additional improvements in the power density of the electrical distribution system are required. Silicon carbide (SiC) devices have many advantages over their silicon (Si) counterparts that can lead to improvements in the power density. However, their characteristically switching speeds can result in higher levels of electromagnetic interference (EMI). This research compares the performance of two high power three phase inverters; one is built from SiC MOSFETs and the other from Si IGBTs. The efficiency and conducted EMI are measured at a DC bus of 540 V and an output power exceeding 25 kW.