Static and Dynamic Characterization of a 2.5 kV SiC MOSFET

In this work, a 2.5 kV discrete SiC MOSFET manufactured by GE with a 58 A current rating and a 40 m Ω on-resistance is characterized, both statically and dynamically. The high current capabilities within a discrete package at 2.5 kV MOSFET offers improved performance differentiation when compared to both traditional 1.7 kV discrete devices and 3.3 kV power modules. This device is characterized statically, dynamically and under increased temperature conditions up to 200°C. A clamped, inductive test circuit is used to conduct the double pulse tests necessary to determine the switching energy losses. These measurements are compared to a commercially available SiC MOSFET that is similarly rated.

I. Introduction

Wide bandgap (WBG) power devices, especially Silicon Carbide (SiC) devices, offer benefits over traditional silicon technology. These benefits range from thermal benefits to high voltage benefits [1], [2]. When compared to silicon, the critical breakdown voltage of 4H-SiC (2.2 MV/cm) is about 8 times that of silicon (0.25 MV/cm) [3], [4]. This increase allows smaller devices to be fabricated that can block higher voltages with lower on-resistances [1], [5]. In addition, it contributes to increased thermal performance, for which SiC has an inherent advantage [3], [6]. SiC MOSFETs have increased performance metrics in switching speeds because of their lower capacitances and increased saturation velocity [3], [7], which allow the miniaturization of passive components in power electronic circuits.