Fault Detection Methodology for the IGBT Based on Measurement of Collector Transient Current

This paper proposes an analysis and design of a faults detection electronics scheme applied to the insulated gate bipolar transistor (IGBT), this proposal is based on on-line monitoring the collector current slope signal during the turn-on transient. To achieve early detection a narrow detection window with fixed thresholds is established according to the parametric values and physical model of the IGBT, some experimental parametric analyses are presented in order to validate the proposed fault-detection technique.