A Numerical Large Signal Model for Kink Effect on AlGaN/GaN HEMT

A numerical large signal model for kink effect on AlGaN/GaN HEMT is proposed in this paper. The most basic 15-element equivalent circuit model is used with accredited S-parameter simulation accuracy. A new current expression based on hyperbolic tangent function tanh is proposed, which shows high fitting precision. The simulated and measured results of I-V, S-parameter are compared for an on-wafer AlGaN/GaN HEMT with two gate fingers each being 0.86-μm long and 40-μm wide (40μm×2). Using this numerical large signal model, parameters extraction would be much easier with a great veracity for kink effect.