A Wideband 28 GHz Fully-Integrated Power Amplifier in 65 nm CMOS Technology

A 28 GHz two-stage power amplifier is designed and measured in 65 nm CMOS technology. Using a two-stage common-source (CS) power amplifier topology with a Multi-section L-matching network, the circuit achieves 44% bandwidth while it maintains saturated output power, high gain and efficiency. Two stages are both biased in class AB with a total current of 60 mA from 1.03 V supply The power amplifier achieves a power gain of 17.5 dB and a saturated output power of 11.9 dBm with peak PAE of 22.1% at 27.5 GHz. The measured power amplifier achieves 1-dB saturated output power bandwidth of 12 GHz (44%) from 22-34 GHz.