A 3.5GHz GaAs pHEMT Power Amplifier

In this paper, a monolithic integrated power amplifier based on 0.25um GaAs pHEMT process working in 3.36GHz-3.65GHz is designed, fabricated and measured. Integrated microstrip line is used as the passive load of the power stage; input and output LC matching network are designed. The measurement results show that the gain of power amplifier is 16dB. The output power at 1dB compression point (P1dB) is 23dBm along with the efficiency of 22% at central frequency.