Design of a 6–18 GHz Low Noise Amplifier Using 0.25-um GaAs pHEMT D-Mode Technology

A 6-18 GHz low noise amplifier using 0.25-um GaAs pHEMT depletion-mode technology is presented in this paper. The ultra-broadband LNA exhibits a small signal gain of 18 dB and a gain flatness of lower than ±0.5 dB under 3.5-V supply with 105-rnA current consumption. The simulation results of the LNA show a noise figure of 1.9 dB and a P1dB of 10.6 dBm. The chip size is 2.30 mm × 1.00 mm.